features low cost diffused junction the plastic material carries u/l recognition 94v-0 mechanical data c a s e: j e d e c d o - 1 5 , m o l ded pl a s t i c mil-std-202,method 208 mounting: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. maximum peak repetitive reverse voltage v rrm 400 600 800 1000 v max imum rms v olt a ge v rms 280 420 560 700 v maximum dc blocking voltage v dc 400 600 800 1000 v maximum average f orw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 10ms single half-sine-w ave superimplsed on rated load @t j =125 maximum instantaneous forw ard voltage @ i f =i f ( av ) v f 2.5 v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r jl <d operating junction temperature range t j storage temperature range t stg 2. measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. 3. thermal resistance j unction to ambient. a a a 0.95 1.5 50 . 0 20 . 0 1.1 400.0 300.0 2.0 1.5 RU3yx(z) - - - RU3c(z) units s imilar s olvents easily cleaned with freon, alcohol, lsopropand and RU3c RU3b RU3a h i gh e ff i c i e n cy r e c t i f i e r s 70 100 RU3 voltage range: 100--- 1000 v current: 1.1 - 2.0 a maximum ratings and electrical characteristics d o - 15 low leakage low forward voltage drop terminals: axial leads,solderable per i fsm i f(av) 12 i r ru 3 y x 10.0 50 100 100 50 30 note: 1.measured with i f =0.5a, i r =1a, i rr =0.25a - 55 ----- + 150 - 55 ----- + 150 polarity: color band denotes cathode w e i gh t : 0 . 0 1 4 o u n c e s , 0 . 39 g r a m s 1.5 dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes ambient temperature, average forward rectified current instantaneous forward current instantaneous forward voltage, volts fi g. 5--typi cal juncti on capaci tance peak forward surge current amperes number of cycles at 60hz junction capacitance,pf reverse voltage,volts RU3yx(z)---RU3c(z) fi g. 1 -- test ci rcui t di agram and reverse recovery ti me characteri sti c fi g. 4 -- peak forward surge current set time base for 10/20 ns/cm fi g. 2 -- typi cal forward characteri sti c fi g. 3 -- forward derati ng curve notes:1.rise time = 7ns max.input impedance =1m . 22pf. jjjj 2.rise time =10ns max.source impedance=50 . pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note1) (+) 25vdc (approx) (-) t rr -1.0a -0.25a 0 +0.5a 1cm 1 1 0 50 0 10 20 30 40 50 RU3yx 5 RU3,RU3a,RU3b,RU3c 8.3ms single half sine-wave 50 1.0 0 25 single phase half wave 60hz resistive or inductive load 0.5 1.5 2.0 75 100 150 125 RU3b RU3,RU3a,RU3c RU3yx t j =25 1 2 4 10 20 40 60 100 200 0 . 1 0 . 2 0 . 4 1 2 4 10 40 1 0 0 20 RU3a\RU3b \RU3c RU3yx\ RU3 0 0.01 0.1 1.0 10 t j =25 pulse width=300 diode semiconductor korea www.diode.kr
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